https://scholars.lib.ntu.edu.tw/handle/123456789/289578
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Gila, BP | en_US |
dc.contributor.author | Lee, KN | en_US |
dc.contributor.author | Johnson, W | en_US |
dc.contributor.author | Ren, F | en_US |
dc.contributor.author | Abernathy, CR | en_US |
dc.contributor.author | Pearton, SJ | en_US |
dc.contributor.author | Hong, M | en_US |
dc.contributor.author | Kwo, J | en_US |
dc.contributor.author | Mannaerts, JP | en_US |
dc.contributor.author | Anselm, KA | en_US |
dc.contributor.author | MINGHWEI HONG | zz |
dc.creator | Gila, BP;Lee, KN;Johnson, W;Ren, F;Abernathy, CR;Pearton, SJ;Hong, M;Kwo, J;Mannaerts, JP;Anselm, KA | - |
dc.date.accessioned | 2018-09-10T03:28:34Z | - |
dc.date.available | 2018-09-10T03:28:34Z | - |
dc.date.issued | 2000 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/289578 | - |
dc.language | en | en |
dc.relation.ispartof | IEEE/Cornell Conference on High Performance Devices, 2000 | - |
dc.source | AH | - |
dc.title | A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs | - |
dc.type | conference paper | en |
dc.identifier.scopus | 2-s2.0-0034593903 | - |
dc.relation.pages | 182-191 | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
crisitem.author.dept | Applied Physics | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Physics | - |
crisitem.author.orcid | 0000-0003-4657-0933 | - |
crisitem.author.parentorg | College of Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Science | - |
顯示於: | 應用物理研究所 |
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