https://scholars.lib.ntu.edu.tw/handle/123456789/296542
標題: | Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds | 作者: | Chiu, Y.S. Ya, M.H. Su, W.S. Chen, T.T. HAO-HSIUNG LIN YANG-FANG CHEN |
公開日期: | 2002 | 卷: | 81 | 期: | 26 | 起(迄)頁: | 4943-4945 | 來源出版物: | Applied Physics Letters | 摘要: | The anisotropic properties of type-II GaAs/GaAsSb heterostructures were studied using photoluminescence (PL) and photoconductivity (PC). It was demonstrated that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells were attributed to the orientation of the inherent chemical bonds at heterointerfaces. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0037164857&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/296542 |
DOI: | 10.1063/1.1532108 | SDG/關鍵字: | Anisotropy; Chemical bonds; Heterojunctions; Photoconductivity; Photoluminescence; Polarization; Semiconducting gallium arsenide; Giant polarized photoluminescence; Semiconductor quantum wells |
顯示於: | 物理學系 |
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