https://scholars.lib.ntu.edu.tw/handle/123456789/296936
標題: | Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing | 作者: | Hong, C.-C. Chen, J.-L. JENN-GWO HWU |
公開日期: | 2002 | 卷: | 20 | 期: | 2 | 起(迄)頁: | 544-548 | 來源出版物: | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films | 摘要: | The growth of thin oxides by rapid thermal processing (RTP) under different O2 pressures and comparison of the uniformity of oxides by two-step oxidation and by typical one-step oxidation was presented. The process indicated that as oxidation time increases high pressure tends to make oxide thickness less uniform. The results showed that oxide thickness uniformity exhibits a 'self-compensating' behavior in low pressure oxidation, and tends to degrade with oxidation under high pressure oxidation. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036494479&doi=10.1116%2f1.1453455&partnerID=40&md5=05f4425de429551b3ffe03208ff29b30 http://scholars.lib.ntu.edu.tw/handle/123456789/296936 |
DOI: | 10.1116/1.1453455 | SDG/關鍵字: | Dielectric materials; Electric breakdown; Film growth; Gates (transistor); Pressure effects; Rapid thermal annealing; Rate constants; Thermooxidation; Thin oxides; Thin films |
顯示於: | 電機工程學系 |
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