https://scholars.lib.ntu.edu.tw/handle/123456789/297183
標題: | Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells | 作者: | Lin, Y.-S. Ma, K.-J. Chung, Y.-Y. CHIH-WEN LIU Feng, S.-W. Cheng, Y.-C. CHIH-CHUNG YANG Kuo, C.-T. Tsang, J.-S. |
關鍵字: | InGaN/GaN quantum wells; Quantum dots; Thermal annealing; Transmission electron microscopy | 公開日期: | 2002 | 卷: | 4913 | 起(迄)頁: | 103-106 | 來源出版物: | Proceedings of SPIE - The International Society for Optical Engineering | 摘要: | It is shown that post-growth thermal annealing of such a sample with temperature ranging from 800 to 900°C led to a better confinement of indium rich clusters near InGaN quantum well layers. Transmission electron microscopy (TEM) and energy filter TEM results manifested that the sizes of indium-rich QDs were reduced with increasing annealing temperature. Also, the size homogeneity was improved. Quasi-regular arrays of indium-rich QDs embedded in InGaN quantum wells were observed in the sample of 900°C annealing. X-ray diffraction also showed the enhancement of InN relative intensity. Photoluminescence measurements revealed blue shifts of photon emission spectral peak, indicating stronger quantum confinement after thermal annealing. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0036442537&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/297183 |
DOI: | 10.1117/12.482212 | SDG/關鍵字: | Annealing; Gallium nitride; High temperature effects; Optical variables measurement; Photoluminescence; Photons; Semiconducting indium compounds; Semiconductor quantum wells; Transmission electron microscopy; X ray diffraction; Indium gallium nitride; Photoluminescence measurement; Thermal annealing; Semiconductor quantum dots |
顯示於: | 電機工程學系 |
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