|Title:||1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy||Authors:||Liu, P.W.
|Issue Date:||5-Feb-2004||Journal Volume:||40||Journal Issue:||3||Start page/Pages:||-||Source:||ELECTRONICS LETTERS||Abstract:||
A highly strained GaAs GaAs0.64 Sb0.36 single quantum well laser has
been grown on GaAs (100) substrate by using solid source molecular
beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mm
pulsed operation with a low threshold current density of 300 A cm
spontaneous emission of the laser was also studied. The result reveals
that the Auger recombination component dominates the threshold
current at high temperature.
|Appears in Collections:||數學系|
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