https://scholars.lib.ntu.edu.tw/handle/123456789/303179
標題: | Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum | 作者: | Peng, Y.H. Chen, C.C. CHIEH-HSIUNG KUAN Cheng, H.H. |
關鍵字: | Blocking layer; Ge quantum dot infrared photodetector; Long wavelength infrared photodetector; Wavelength tunability | 公開日期: | 2003 | 卷: | 47 | 期: | 10 | 起(迄)頁: | 1775-1780 | 來源出版物: | Solid-State Electronics | 摘要: | A p-type Ge quantum dot infrared photodetector is investigated in this paper. The intrinsic thick Si layers are utilized to block the dark current under low bias and adjust the tunneling probability by controlling applied field to tune the responsivity spectrum. The 30 K responsivity spectrum shows broadband from 2 to 9 μm at zero bias with photovoltaic effect and extends its range to 20 μm when the applied bias is increased. For long wavelength detection, our detector is tunable with Si blocking layer. The detectivity in this sample has maximum value toward 2.1 × 1010 cm (Hz0.5)/W under 0.2 V for the 6 μm wavelength. That for the long wavelength is ∼109 cm (Hz0.5)/W. © 2003 Elsevier Ltd. All rights reserved. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0041592438&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/303179 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0041592438&doi=10.1016%2fS0038-1101%2803%2900136-9&partnerID=40&md5=96b42fc094123849ce2facff6a2015da |
ISSN: | 00381101 | DOI: | 10.1016/S0038-1101(03)00136-9 | SDG/關鍵字: | Electric currents; Infrared radiation; Photodetectors; Photovoltaic effects; Semiconducting silicon; Spectrum analysis; Blocking layers; Semiconductor quantum dots |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。