https://scholars.lib.ntu.edu.tw/handle/123456789/303339
Title: | DC characterization of Ga0.51In0.49P/GaAs insulated-gate inverted-structure HEMT grown by Gas Source Molecular Beam Epitaxy (GSMBE) | Authors: | SHEY-SHI LU | Issue Date: | 1993 | Start page/Pages: | 455-458 | Source: | European Solid-State Device Research Conference | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84907685157&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/303339 |
Appears in Collections: | 電機工程學系 |
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