https://scholars.lib.ntu.edu.tw/handle/123456789/304376
標題: | High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications | 作者: | Kim, Jonghae Plouchart, Jean-Olivier Zamdmer, Noah Fong, Neric LIANG-HUNG LU Tan, Yue Jenkins, Keith A. Sherony, Melanie Groves, Robert Kumar, Mahender Ray, Asit |
公開日期: | 六月-2003 | 起(迄)頁: | 591-594 | 來源出版物: | IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers | 會議論文: | 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium | 摘要: | This paper presents high-Q and high-inductance-density on-chip inductors fabricated on high-resistivity substrate (HRS) using a 0.12 μm SOI CMOS technology with 8 copper metal layers. A peak Q of 52 is obtained at 5 GHz for a 0.6 nH STP (Single-turn, multiple metal levels in Parallel) inductor. An inductance density of 5302 fH/μm2 is obtained for a 42 nH MTS (Multi-turn, multiple metal layers in Series) inductor. |
URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/304376 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0043162165&partnerID=40&md5=1d2e4ab05d36d4f508ad328a89e7d034 |
DOI: | 10.1109/rfic.2003.1214016 | SDG/關鍵字: | Electric inductors; Electric network analysis; Q factor measurement; Semiconductor device models; System on chip (SOC) technology; CMOS integrated circuits |
顯示於: | 電子工程學研究所 |
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