https://scholars.lib.ntu.edu.tw/handle/123456789/306794
標題: | Binding energies of D- ion in GaAs quantum well | 作者: | YUAN-HUEI CHANG Yeh, J.J. Sheu, Y.M. Wang, C.C. Chen, T.C. Chang, K.H. Lee, C.P. |
公開日期: | 1994 | 卷: | 37 | 期: | 4-6 | 起(迄)頁: | 673-675 | 來源出版物: | Solid State Electronics | 摘要: | Magnetic field dependent binding energies of the D- ion in the center of a 210 Å GaAs quantum well are determined by temperature dependent magneto-transport measurements. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies obtained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states. © 1994. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0028409435&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/306794 |
ISSN: | 00381101 | DOI: | 10.1016/0038-1101(94)90273-9 | SDG/關鍵字: | Electron energy levels; Electron transitions; Electron transport properties; Magnetic field effects; Semiconducting gallium arsenide; Thermal effects; Binding energies; Magnetooptical measurements; Semiconductor quantum wells |
顯示於: | 物理學系 |
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