https://scholars.lib.ntu.edu.tw/handle/123456789/309383| Title: | Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition | Authors: | Liu, C.W. Sturm, J.C. Lacroix, Y.R.J. Thewalt, M.L.W. Perovic, D.D. CHEE-WEE LIU |
Issue Date: | 1994 | Journal Volume: | 65 | Journal Issue: | 1 | Start page/Pages: | 76-78 | Source: | Applied Physics Letters | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0028764144&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/309383 |
DOI: | 10.1063/1.113079 |
| Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.