https://scholars.lib.ntu.edu.tw/handle/123456789/313649
標題: | Raman study of Si-Ge intermixing in Ge quantum rings and dots | 作者: | Mashanov, V.I. Cheng, H.-H. Chia, C.-T. YUAN-HUEI CHANG |
關鍵字: | Germanium; Quantum dots; Quantum rings; Raman scattering | 公開日期: | 2005 | 卷: | 28 | 期: | 4 | 起(迄)頁: | 531-536 | 來源出版物: | Physica E: Low-Dimensional Systems and Nanostructures | 摘要: | The Ge/Si (1 0 0) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75 nm and Si cap with thickness 2.5 nm were deposited by the method of molecular beam epitaxy at the temperature range 640-700°C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift of the Raman signal we have found that the average concentration of Ge decreases considerably from 44% to 27%, when the growth temperature increases, whereas the degree of strain relaxation remains roughly the same. This allows us to conclude that intermixing is a dominating mechanism for strain relaxation in processes of transformation of Ge quantum dots to quantum rings. © 2005 Elsevier B.V. All rights reserved. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-24144475525&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/313649 |
ISSN: | 13869477 | DOI: | 10.1016/j.physe.2005.05.060 | SDG/關鍵字: | Atomic force microscopy; Germanium; Molecular beam epitaxy; Nanostructured materials; Optical properties; Raman scattering; Strain control; Thermal effects; Optical spectroscopy; Quantum rings; Raman signals; Strain relaxation; Semiconductor quantum dots |
顯示於: | 物理學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。