https://scholars.lib.ntu.edu.tw/handle/123456789/317536
標題: | Performance evaluation of field-enhanced p-channel split-gate flash memory | 作者: | W. T. Chu Y. H. Wang C. T. Hsieh Y. T. Lin C. S. Wang HAO-HSIUNG LIN |
關鍵字: | Field-enhanced structure; Flash memory; P-channel; Split-gate | 公開日期: | 九月-2005 | 卷: | 26 | 期: | 9 | 起(迄)頁: | 670-672 | 來源出版物: | IEEE Electron Device Letters | 摘要: | A p-channel split-gate Flash memory cell, employing a field-enhanced structure, is investigated in this letter. A cell with a sharp poly-tip structure is utilized to enhance the electric field, while using Fowler-Nordheim tunneling through the interpoly oxide. The cell demonstrated an erase voltage as low as 12 V. In cell programming, both channel-hot-hole impact ionization induced channel-hot-electrons (CHE) and band-to-band tunneling induced hot electrons (BBHE) are evaluated. BBHE shows an injection efficiency of ∼2 orders in magnitude higher than that of CHE. The cell also demonstrated an acceptable program disturb window, which is of high concern in a p-channel stacked-gate cell. Both programming approaches can pass 300 k program/erase cycles. © 2005 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-26444507907&doi=10.1109%2fLED.2005.853633&partnerID=40&md5=7214730dc4c53edd34f4be53f1441e8f | DOI: | 10.1109/LED.2005.853633 | SDG/關鍵字: | Band structure; Electric field effects; Electron tunneling; Gates (transistor); Impact ionization; Semiconductor device manufacture; Semiconductor device structures; Semiconductor device testing; Channel-hot-hole impact ionization; Field-enhanced flash memory; Field-enhanced structure; Performance evaluation; Split-gate flash memory; Flash memory |
顯示於: | 電機工程學系 |
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