https://scholars.lib.ntu.edu.tw/handle/123456789/322236
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Teng, C.-C. | en_US |
dc.contributor.author | Wang, H.-C. | en_US |
dc.contributor.author | Tang, T.-Y. | en_US |
dc.contributor.author | Lu, Y.-C. | en_US |
dc.contributor.author | Cheng, Y.-C. | en_US |
dc.contributor.author | CHIH-CHUNG YANG | en_US |
dc.contributor.author | Ma, K.-J. | en_US |
dc.contributor.author | Wang, W.-M. | en_US |
dc.contributor.author | Hsu, C.-W. | en_US |
dc.contributor.author | LI-CHYONG CHEN | en_US |
dc.creator | Teng, C.-C.;Wang, H.-C.;Tang, T.-Y.;Lu, Y.-C.;Cheng, Y.-C.;Yang, C.C.;Ma, K.-J.;Wang, W.-M.;Hsu, C.-W.;Chen, L.C. | - |
dc.date.accessioned | 2018-09-10T05:53:20Z | - |
dc.date.available | 2018-09-10T05:53:20Z | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 00220248 | - |
dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-31644438017&partnerID=MN8TOARS | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/322236 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-31644438017&doi=10.1016%2fj.jcrysgro.2005.12.012&partnerID=40&md5=762977b4fffdf4b7c0849dafbcc03286 | - |
dc.description.abstract | We study the depth-dependent variation of optical property beyond the critical thickness in an InGaN thin film. In the sample, both free-carrier and localized-state recombination activities are observed. The emission peak corresponding to the localized states in photoluminescence (PL) measurement becomes more prominent with increasing sample depth, implying stronger clustering in the deeper layers. Although the PL spectral peak variation is weak, that of cathodoluminescence (CL), corresponding to the activities of the localized states, shows a clear red shift trend with depth. The red shift trend is attributed to the stronger clustering behavior and possibly stronger quantum-confined Stark effect in the nano-clusters, which is due to the residual strain beyond the critical thickness, in a deeper layer. © 2005 Elsevier B.V. All rights reserved. | - |
dc.language | en | en |
dc.relation.ispartof | Journal of Crystal Growth | en_US |
dc.source | AH | - |
dc.subject | A1. Segregation; B1. Nitride; B3. Light-emitting diodes | - |
dc.subject.other | Electromagnetic wave emission; Light emitting diodes; Nanostructured materials; Nitrides; Optical films; Optical properties; Photoluminescence; Segregation (metallography); Critical thickness; Nano-clusters; Quantum-confined Stark effect; Residual strain; Semiconducting indium compounds | - |
dc.title | Depth dependence of optical property beyond the critical thickness of an InGaN film | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1016/j.jcrysgro.2005.12.012 | - |
dc.identifier.scopus | 2-s2.0-31644438017 | - |
dc.relation.pages | 18-22 | - |
dc.relation.journalvolume | 288 | - |
dc.relation.journalissue | 1 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.orcid | 0000-0002-3476-3802 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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