https://scholars.lib.ntu.edu.tw/handle/123456789/32419
標題: | Transport Mechanisms in n-Type Porous Silicon Obtained by Photoelectrochemical Etching | 作者: | Chen, C.H. Chen, Y.F. |
公開日期: | 四月-2000 | 出版社: | 臺北市:國立臺灣大學物理系所 | 卷: | VOL. 38 | 期: | NO. 2-I | 起(迄)頁: | - | 來源出版物: | CHINESE JOURNAL OF PHYSICS | 摘要: | The electrical conduction properties of metal/porous silicon/n-Si/metal have been investigated using current-voltage (I-V) measurements. The characteristics for all devices show a rectifying behavior with ideality factor close to unity. A value of 0.79 eV for the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2006092712003714868 | 其他識別: | 2006092712003714868 |
顯示於: | 物理學系 |
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