|Title:||Compositional Dependence of the Conduction-Band Effective Mass of InGaAsP Lattice Matched to InP||Authors:||Fan, J.C.
|Issue Date:||Aug-1997||Publisher:||臺北市:國立臺灣大學物理系所||Journal Volume:||VOL. 35||Journal Issue:||NO. 4||Start page/Pages:||-||Source:||CHINESE JOURNAL OF PHYSICS||Abstract:||
The conduction-band-edge effective masses in InGaAsP alloys have been determined
for several different compositions covering the complete range of alloys grown latticematched
on InP. The effective mass is obtained from far-infrared optically detected
cyclotron resonance (ODCR). In contrast to previous experiments, the ODCR technique
provides a direct method to determine the band-edge effective mass in undoped
thin films. Thus, a correction due to nonparabolicity effects is not required. It is found
that the experiment,al values are larger than the effective masses predicted from the
five-band z p calculation. We show that this discrepancy can be satisfactorily removed
by the introduction of the effect of disorder-induced potential fluctuations which causes
the wavefunction mixing between conduction and valence bands. It is found that the
strength of the potential fluctuations can be well described in terms of the Phillips s
electronegativity difference related to chemical disorder. In addition, the dependence
of the band-gap energy on alloy composition is determined by photoluminescence measurements,
and it also shows a nonlinear relationship.
|Appears in Collections:||物理學系|
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