https://scholars.lib.ntu.edu.tw/handle/123456789/32455
標題: | Compositional Dependence of the Conduction-Band Effective Mass of InGaAsP Lattice Matched to InP | 作者: | Fan, J.C. Chen, Y.F. Liu, J.S. Lin, H.H. |
公開日期: | 八月-1997 | 出版社: | 臺北市:國立臺灣大學物理系所 | 卷: | VOL. 35 | 期: | NO. 4 | 起(迄)頁: | - | 來源出版物: | CHINESE JOURNAL OF PHYSICS | 摘要: | The conduction-band-edge effective masses in InGaAsP alloys have been determined for several different compositions covering the complete range of alloys grown latticematched on InP. The effective mass is obtained from far-infrared optically detected cyclotron resonance (ODCR). In contrast to previous experiments, the ODCR technique provides a direct method to determine the band-edge effective mass in undoped thin films. Thus, a correction due to nonparabolicity effects is not required. It is found that the experiment,al values are larger than the effective masses predicted from the five-band z p calculation. We show that this discrepancy can be satisfactorily removed by the introduction of the effect of disorder-induced potential fluctuations which causes the wavefunction mixing between conduction and valence bands. It is found that the strength of the potential fluctuations can be well described in terms of the Phillips s electronegativity difference related to chemical disorder. In addition, the dependence of the band-gap energy on alloy composition is determined by photoluminescence measurements, and it also shows a nonlinear relationship. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/200609271159429141 | 其他識別: | 200609271159429141 |
顯示於: | 物理學系 |
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