https://scholars.lib.ntu.edu.tw/handle/123456789/325279
Title: | Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes | Authors: | A. Krier M. Stone Q. D. Zhuang P. W. Liu G. Tsai HAO-HSIUNG LIN |
Issue Date: | Aug-2006 | Journal Volume: | 89 | Journal Issue: | 9 | Start page/Pages: | 091110 | Source: | Applied Physics Letters | Abstract: | Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 μm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 μm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output. © 2006 American Institute of Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748267676&doi=10.1063%2f1.2339036&partnerID=40&md5=de42ae2c24a9b5c03888d4e757837c70 | DOI: | 10.1063/1.2339036 | SDG/Keyword: | Deposition; Epitaxial growth; Indium compounds; Light emitting diodes; Semiconductor quantum wells; Confined holes; Injection current; Surface exposure; Electroluminescence |
Appears in Collections: | 電機工程學系 |
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