|Title:||Strain relaxation and quantum confinement in InGaN/GaN nanoposts||Authors:||Chen, Horng-Shyang
|Issue Date:||2006||Publisher:||Taipei:National Taiwan University Dept Phys||Start page/Pages:||-||Source:||Nanotechnology 17, 1454–1458||Abstract:||
Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography & inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL & time-resolved PL measurements & a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement & strain relaxation.
|Appears in Collections:||物理學系|
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