https://scholars.lib.ntu.edu.tw/handle/123456789/32829
Title: | Strain relaxation and quantum confinement in InGaN/GaN nanoposts | Authors: | Chen, Horng-Shyang Yeh, Dong-Ming Lu, Yen-Cheng Chen, Cheng-Yen Huang, Chi-Feng Tang, Tsung-Yi Yang, C.C. Wu, Cen-Shawn Chen, Chii-Dong |
Issue Date: | 2006 | Publisher: | Taipei:National Taiwan University Dept Phys | Start page/Pages: | - | Source: | Nanotechnology 17, 1454–1458 | Abstract: | Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography & inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL & time-resolved PL measurements & a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement & strain relaxation. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2006111501211846 | Other Identifiers: | 246246/2006111501211846 |
Appears in Collections: | 物理學系 |
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