https://scholars.lib.ntu.edu.tw/handle/123456789/331398
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, PJ | en_US |
dc.contributor.author | Chu, LK | en_US |
dc.contributor.author | Chen, YW | en_US |
dc.contributor.author | Chiu, YN | en_US |
dc.contributor.author | Yang, HP | en_US |
dc.contributor.author | Chang, P | en_US |
dc.contributor.author | Kwo, J | en_US |
dc.contributor.author | Chi, J | en_US |
dc.contributor.author | Hong, M | en_US |
dc.contributor.author | MINGHWEI HONG | zz |
dc.creator | Tsai, PJ;Chu, LK;Chen, YW;Chiu, YN;Yang, HP;Chang, P;Kwo, J;Chi, J;Hong, M | - |
dc.date.accessioned | 2018-09-10T06:28:18Z | - |
dc.date.available | 2018-09-10T06:28:18Z | - |
dc.date.issued | 2007 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/331398 | - |
dc.language | en | en |
dc.relation.ispartof | Journal of Crystal Growth | - |
dc.source | AH | - |
dc.title | Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectric | - |
dc.type | journal article | en |
dc.relation.pages | 1013-1016 | - |
dc.relation.journalvolume | 301 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Applied Physics | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Physics | - |
crisitem.author.orcid | 0000-0003-4657-0933 | - |
crisitem.author.parentorg | College of Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Science | - |
顯示於: | 應用物理研究所 |
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