https://scholars.lib.ntu.edu.tw/handle/123456789/332659
Title: | Mechanisms of enhanced hole-injection in organic light-emitting devices with MoO3 layers | Authors: | Lin, C.-T. Lee, G.-R. CHIH-I WU Cho, T.-Y. CHUNG-CHIH WU Pi, T.-W. |
Issue Date: | 2007 | Start page/Pages: | 179-181 | Source: | IDMC 2007 - International Display Manufacturing Conference and FPD Expo | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-56049090111&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/332659 https://www.scopus.com/inward/record.uri?eid=2-s2.0-56049090111&partnerID=40&md5=43b62a4965238fd4c57053eb6d7cd400 |
ISSN: | We demonstrate that the inserted hole injection layer MoO3 between anode and Hole-Transport Layers, N,N′-diphenyl-N,N′ -bis(1-naphthyl)-1,1′-biphenyl-4,4″-diamine (NPB) effectively reduces the difference of NPB Fermi level to HOMO about 1eV than pristine NPB on ITO. The electronic structures and the interface chemistry studied by ultraviolet photoemission spectra (UPS) and core-level x-ray photoemission spectra (XPS) data show that the enhanced hole injection is associated with strong p-doping effects and the increases of hole concentration in the hole-transport layer is induced by MoO3. All of the films are compared using density current-voltage (J-V) and quantum-efficiency (η-J) measurement. | SDG/Keyword: | Amines; Concentration (process); Data structures; Electric currents; Electron injection; Electronic structure; Emission spectroscopy; Exhibitions; Hole traps; Photoelectricity; Photoemission; Power supply circuits; Ultraviolet spectroscopy; Density currents; Di-amines; Doping effects; Hole injection layers; Hole injections; Interface chemistries; Organic light-emitting devices; Transport layers; Ultraviolet photoemission spectrums; Hole concentration |
Appears in Collections: | 光電工程學研究所 |
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