https://scholars.lib.ntu.edu.tw/handle/123456789/338627| Title: | Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method | Authors: | Chuang, K.-C. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2008 | Journal Volume: | 155 | Journal Issue: | 8 | Source: | Journal of the Electrochemical Society | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-46649108014&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/338627 |
DOI: | 10.1149/1.2938375 |
| Appears in Collections: | 電機工程學系 |
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