https://scholars.lib.ntu.edu.tw/handle/123456789/340840
標題: | High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array | 作者: | Chen, Yan-Ru Kuan, Chieh-Hsiung Suen, Yuen-Wuu Peng, Yu-Hwa Chen, Peng-Shiu Chao, Cha-Hsin Liang, Eih-Zhe CHING-FUH LIN Lo, Hung-Chun |
公開日期: | 2008 | 卷: | 93 | 期: | 8 | 來源出版物: | Applied Physics Letters | 摘要: | The selective growth of high-density one-dimensional well-aligned Ge quantum dots (QDs) on the top of nanoridges patterned on Si substrate is reported. The period of ridge array is 150 nm, the width of each ridge is 80 nm, and the depth of the trench is 20 nm. The areal density of QDs is about 5.4× 109 cm-2. Simulations of the chemical potential show that a proper distribution of the surface curvature may give rise to a suitable chemical potential minimum helping positioning the QDs. These ridges can also be used to control the shape and the uniformity of QDs. © 2008 American Institute of Physics. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-51349133994&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/340840 https://www.scopus.com/inward/record.uri?eid=2-s2.0-51349133994&doi=10.1063%2f1.2976549&partnerID=40&md5=e268edba27c52569cfdcb3fb1490b50f |
ISSN: | 00036951 | DOI: | 10.1063/1.2976549 | SDG/關鍵字: | Chemical potential; Chemicals; Germanium; Optical waveguides; Silicon; Chemical-; High-density; Well-aligned; Semiconductor quantum dots |
顯示於: | 電機工程學系 |
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