https://scholars.lib.ntu.edu.tw/handle/123456789/347706
Title: | Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA) | Authors: | Shih, Y.-H. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 1999 | Journal Volume: | 20 | Journal Issue: | 11 | Start page/Pages: | 545-547 | Source: | IEEE Electron Device Letters | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0033221322&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/347706 |
DOI: | 10.1109/55.798038 |
Appears in Collections: | 電機工程學系 |
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