https://scholars.lib.ntu.edu.tw/handle/123456789/349414
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, TD | en_US |
dc.contributor.author | Chiu, HC | en_US |
dc.contributor.author | Chang, P | en_US |
dc.contributor.author | Chang, YH | en_US |
dc.contributor.author | Lin, CA | en_US |
dc.contributor.author | Chang, WH | en_US |
dc.contributor.author | Kwo, J | en_US |
dc.contributor.author | Tsai, W | en_US |
dc.contributor.author | MINGHWEI HONG | en_US |
dc.date.accessioned | 2018-09-10T07:34:13Z | - |
dc.date.available | 2018-09-10T07:34:13Z | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/349414 | - |
dc.language | en | en |
dc.relation.ispartof | Proceedings of the European Solid State Device Research Conference, 2009 | - |
dc.source | AH | - |
dc.title | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | - |
dc.type | conference paper | en |
dc.relation.pages | 399-402 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | none | - |
item.openairetype | conference paper | - |
crisitem.author.dept | Applied Physics | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Physics | - |
crisitem.author.orcid | 0000-0003-4657-0933 | - |
crisitem.author.parentorg | College of Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Science | - |
Appears in Collections: | 應用物理研究所 |
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