https://scholars.lib.ntu.edu.tw/handle/123456789/350419
Title: | The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's | Authors: | Lan, H. Lin, Y.-S. Meng, C.-C. Lu, S.-S. |
Issue Date: | 1999 | Journal Volume: | 46 | Journal Issue: | 1 | Start page/Pages: | 48-54 | Source: | IEEE Transactions on Electron Devices | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0032713670&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/350419 |
DOI: | 10.1109/16.737440 |
Appears in Collections: | 電機工程學系 |
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