https://scholars.lib.ntu.edu.tw/handle/123456789/357732
標題: | Improving flash wear-leveling by proactively moving static data | 作者: | Chang, Y.-H. Hsieh, J.-W. TEI-WEI KUO |
關鍵字: | Endurance; Flash memory; Reliability; Wear leveling | 公開日期: | 2010 | 卷: | 59 | 期: | 1 | 起(迄)頁: | 53-65 | 來源出版物: | IEEE Transactions on Computers | 摘要: | Motivated by the strong demand for flash memory with enhanced reliability, this work attempts to achieve improved flash-memory endurance without substantially increasing overhead and without excessively modifying popular implementation designs such as the Flash Translation Layer protocol (FTL), NAND Flash Translation Layer protocol (NFTL), and Block-Level flash translation layer protocol (BL). A wear-leveling mechanism for moving data that are not updated is proposed to distribute wear-leveling actions over the entire physical address space, so that static or rarely updated data can be proactively moved and memory-space requirements can be minimized. The properties of the mechanism are then explored with various implementation considerations. A series of experiments based on a realistic trace demonstrates the significantly improved endurance of FTL, NFTL, and BL with limited system overhead. © 2006 IEEE. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-72949112022&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/357732 |
ISSN: | 00189340 | DOI: | 10.1109/TC.2009.134 | SDG/關鍵字: | Endurance; Flash translation layer; Implementation design; Leveling mechanism; NAND Flash; Physical address; Space requirements; Strong demand; Updated data; Wear leveling; Durability; Leveling (machinery); Reliability; Flash memory |
顯示於: | 資訊工程學系 |
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