https://scholars.lib.ntu.edu.tw/handle/123456789/364343
Title: | Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET | Authors: | Lin, TD Chang, P Wu, YD Chiu, HC Kwo, J Hong, M MINGHWEI HONG |
Issue Date: | 2011 | Journal Volume: | 323 | Journal Issue: | 1 | Start page/Pages: | 518-521 | Source: | Journal of Crystal Growth | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/364343 |
Appears in Collections: | 應用物理研究所 |
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