https://scholars.lib.ntu.edu.tw/handle/123456789/380237
Title: | Implant isolation of silicon two-dimensional electron gases at 4.2 K | Authors: | Huang, C.-T. Li, J.-Y. Sturm, J.C. JIUN-YUN LI |
Issue Date: | 2013 | Journal Volume: | 34 | Journal Issue: | 1 | Start page/Pages: | 21-23 | Source: | IEEE Electron Device Letters | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84871772433&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/380237 |
DOI: | 10.1109/LED.2012.2228160 |
Appears in Collections: | 電機工程學系 |
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