https://scholars.lib.ntu.edu.tw/handle/123456789/381335
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | K. I. Lin | en_US |
dc.contributor.author | K. L. Lin | en_US |
dc.contributor.author | B. W. Wang | en_US |
dc.contributor.author | H. H. Lin | en_US |
dc.contributor.author | J. S. Huang | en_US |
dc.contributor.author | HAO-HSIUNG LIN | zz |
dc.creator | K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang | - |
dc.date.accessioned | 2018-09-10T09:50:18Z | - |
dc.date.available | 2018-09-10T09:50:18Z | - |
dc.date.issued | 2013-12 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/381335 | - |
dc.language | en | en |
dc.relation.ispartof | Applied Physics Express | en_US |
dc.source | AH-anncc | - |
dc.title | Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation | - |
dc.type | journal article | en |
dc.identifier.doi | 10.7567/APEX.6.121202 | - |
dc.identifier.scopus | 2-s2.0-84890717305 | - |
dc.identifier.isi | WOS:000328160900006 | - |
dc.relation.pages | 121202 | - |
dc.relation.journalvolume | 6 | - |
dc.relation.journalissue | 12 | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-3408-6538 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。