https://scholars.lib.ntu.edu.tw/handle/123456789/392292
Title: | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process | Authors: | Fu, CH MINGHWEI HONG et al. |
Issue Date: | 2015 | Journal Volume: | 147 | Start page/Pages: | 330-334 | Source: | Microelectronic Engineering | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/392292 |
Appears in Collections: | 應用物理研究所 |
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