https://scholars.lib.ntu.edu.tw/handle/123456789/393208
標題: | Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure | 作者: | Laroche, D. Huang, S.-H. Nielsen, E. CHEE-WEE LIU JIUN-YUN LI Lu, T.M. |
公開日期: | 2015 | 卷: | 106 | 期: | 14 | 來源出版物: | Applied Physics Letters | 摘要: | We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Combined Hall densities (nHall) ranging from 2.6-×-1010-cm-2 to 2.7-×-1011-cm-2 were achieved, yielding a maximal combined Hall mobility (μHall) of 7.7-×-105-cm2/(V · s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3-×-1010-cm-2, consistent with Schrödinger-Poisson simulations. The integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap. © 2015 AIP Publishing LLC. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84927597426&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/393208 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84927597426&doi=10.1063%2f1.4917296&partnerID=40&md5=f52887c3c5c73769cd1d618ac51656c7 |
DOI: | 10.1063/1.4917296 | SDG/關鍵字: | Hall mobility; Quantum chemistry; Quantum Hall effect; Quantum theory; Silicon; Anti-symmetric; Bilayer systems; Double quantum well; Electron population; Fractional quantum Hall effects; Magnetotransports; Si/SiGe; Single layer; Semiconductor quantum wells |
顯示於: | 電機工程學系 |
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