https://scholars.lib.ntu.edu.tw/handle/123456789/396608| Title: | Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology | Authors: | Lee, Y.-J. JIUN-YUN LI et al. |
Issue Date: | 2016 | Journal Volume: | 2016-February | Start page/Pages: | 15.1.1-15.1.4 | Source: | International Electron Devices Meeting, IEDM | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-84964031558&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/396608 |
DOI: | 10.1109/IEDM.2015.7409701 |
| Appears in Collections: | 電機工程學系 |
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