https://scholars.lib.ntu.edu.tw/handle/123456789/404486| Title: | Additional nitrogen ion-implantation treatment in STI to relax the intrinsic compressive stress for n-MOSFETs | Authors: | Liao, M.-H. Chen, C.H. Chang, L.C. Yang, C. Kao, S.C. |
Issue Date: | 2012 | Journal Volume: | 59 | Journal Issue: | 8 | Source: | IEEE Transactions on Electron Devices | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/404486 | DOI: | 10.1109/TED.2012.2198824 |
| Appears in Collections: | 電機工程學系 |
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