https://scholars.lib.ntu.edu.tw/handle/123456789/404520| Title: | ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process | Authors: | M. H.Liao P.-G. Chen C. P. Hsieh |
Issue Date: | 2015 | Source: | 9th International Conference on Silicon Epitaxy and Heterostructures | Description: | Canada |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/404520 |
| Appears in Collections: | 電機工程學系 |
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