https://scholars.lib.ntu.edu.tw/handle/123456789/407338
標題: | Effects of various grading types of gallium-ion contents on the properties of Cu(In,Ga)Se 2 films prepared via the spin coating method | 作者: | Wu C.-H. Chen F.-S. Lin S.-H. Ou C.-Y. Lu C.-H. |
關鍵字: | chalcopyrite;Cu(In,Ga)Se 2;gallium grading;spin coating | 公開日期: | 2018 | 卷: | 5 | 期: | 2 | 來源出版物: | Materials Research Express | 摘要: | Copper indium gallium diselenide (Cu(In,Ga)Se 2 ) films with different gallium-ion contents were prepared via a spin coating method followed by a selenization process. Increasing the gallium-ion contents of the prepared films decreased the lattice constants and increased the band gaps. Secondary ion mass spectroscopy analysis revealed that Cu(In,Ga)Se 2 films with different band gap grading types were successfully fabricated. Increasing the contents of gallium ions near the substrate resulted in an increase in the short-circuit current density. On the other hand, increasing in the contents of gallium ions near the surface of the Cu(In,Ga)Se 2 films significantly increased open-circuit voltage V oc . By combining a normal and a reverse grading of gallium-ion contents, Cu(In,Ga)Se 2 films with double grading types of gallium-ions contents exhibited superior electrical properties. The conversion efficiency and fill factor of solar cells with a double grading type of gallium-ion contents reached 6% and 58.7%, respectively. ? 2018 IOP Publishing Ltd. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/407338 | ISSN: | 20531591 | DOI: | 10.1088/2053-1591/aaa417 |
顯示於: | 化學工程學系 |
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