https://scholars.lib.ntu.edu.tw/handle/123456789/407392
標題: | Preparation and characterization of Cd(S,Se) films via the selenium-vapor-assisted annealing process | 作者: | Cheng H.-Y. Ma J.-S. Lu C.-H. |
關鍵字: | CdS;CdSe;Selenization;Thin films | 公開日期: | 2012 | 卷: | 543 | 起(迄)頁: | 84-89 | 來源出版物: | Journal of Alloys and Compounds | 摘要: | Cd(S,Se) thin films were successfully synthesized on the glass substrates via the CBD method followed by selenization. Cd(S,Se) compounds were formed when the selenization temperature exceeded 325 ¢XC. XRD analysis reveals that the prepared films had a cubic structure. The contents of selenium ions in Cd(S,Se) films were increased with increasing reaction temperatures and duration. The band gap of Cd(S,Se) films was controlled between 2.28-1.77 eV by adjusting the selenium-ion contents. All of the synthesized films exhibited n-type characteristics, as determined from Hall effect measurement. The carrier concentration and the conductivity of CdS films were significantly promoted with the selenization process. ? 2012 Elsevier B.V. All rights reserved. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/407392 | ISSN: | 09258388 | DOI: | 10.1016/j.jallcom.2012.07.004 |
顯示於: | 化學工程學系 |
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