https://scholars.lib.ntu.edu.tw/handle/123456789/425034
標題: | Zr?VTi?VNi thin film metallic glass as a diffusion barrier between copper and silicon | 作者: | Wang C.-W. Yiu P. Chu J.P. Shek C.-H. Hsueh C.-H. CHUN-HWAY HSUEH |
公開日期: | 2015 | 卷: | 50 | 期: | 5 | 起(迄)頁: | 2085-2092 | 來源出版物: | Journal of Materials Science | 摘要: | In this study, the performance of Zr¡VTi¡VNi thin film metallic glass (TFMG) as a diffusion barrier between silicon and copper layers is reported. Three 5?nm TFMGs, deposited with or without nitrogen atmosphere, were prepared by magnetron sputtering sandwiched between Si substrate and 100?nm Cu. Rapid thermal annealing was conducted for 30?min at various temperatures between 500 and 800?¢XC to promote inter-diffusion of Cu and Si. Under transmission electron microscopy, there were no observable Cu¡VSi intermetallic compounds in the nitrogen-purged TFMG barrier annealed below 800?¢XC. The failure behaviors of TFMG characterized by the sheet resistance measurement and X-ray diffraction were in agreement. Compared to the sample without nitrogen purging, nitrogen atoms in TFMG were found to increase the failure temperature from 700 to 800?¢XC by retarding crystallization of TFMG and diffusion of copper. The failure mechanism of the barrier was also investigated in this work. Copper is confined at the interface between Cu and barrier layers and reacts with Ti to form new protective layer until full crystallization of TFMG. In conclusion, nitrogen purging could promote the performance of Zr-based TFMG as a diffusion barrier while preserving its amorphicity. ? 2014, Springer Science+Business Media New York. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/425034 | ISSN: | 00222461 | DOI: | 10.1007/s10853-014-8770-6 |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。