|Title:||O2/HMDSO-plasma-deposited organic-inorganic hybrid film for gate dielectric of MgZnO thin-film transistor||Authors:||Tsai C.-H.
|Keywords:||MgZnO;plasma-enhanced chemical vapor deposition (PECVD);silicon oxide;silicones;thin film transistor||Issue Date:||2014||Source:||Plasma Processes and Polymers||Journal Volume:||11||Journal Issue:||1||Start page/Pages:||89-95||Abstract:||
An organic-inorganic hybrid film is deposited from O2/HMDSO plasma. The Si-O-Si/Si-CH3 FTIR absorption ratio of this film increases with the process power and O2/HMDSO precursor flow ratio, resulting in a more inorganic-like film. This hybrid film is used as the gate dielectric of MgZnO TFTs. As the Si-O-Si/Si-CH3 FTIR absorption ratio of the gate dielectric increases, the gate leakage current decreases, on/off current ratio increases, threshold voltage increases, and subthreshold swing increases. High Si-CH3 bonding content in the gate dielectric improves TFT switching but deteriorates gate insulation, resulting in increased gate leakage current and decreased on/off current ratio. ? 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Appears in Collections:||應用力學研究所|
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