https://scholars.lib.ntu.edu.tw/handle/123456789/427621
標題: | Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode | 作者: | Chia-Ying Su Chun-Han Lin Yu-Feng Yao Wei-Heng Liu Ming-Yen Su Hsin-Chun Chiang Meng-Che Tsai Charng-Gan Tu Hao-Tsung Chen Yean-Woei Kiang CHIH-CHUNG YANG |
公開日期: | 2017 | 卷: | 25 | 期: | 18 | 起(迄)頁: | 21526-21536 | 來源出版物: | Optics Express | 摘要: | The high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 ìm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs. © 2017 Optical Society of America. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/427621 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029141979&doi=10.1364%2fOE.25.021526&partnerID=40&md5=57b2c0a20da2b3aae6ec3c66066a792f |
ISSN: | 10944087 | DOI: | 10.1364/oe.25.021526 | SDG/關鍵字: | Bandwidth; Charge injection; Efficiency; Gallium nitride; Hole concentration; Modulation; Plasmons; Circular mesa; Efficiency droops; Electron blocking layer; Hole injection; Internal quantum efficiency; Modulation bandwidth; Output intensity; Surface plasmon coupling; Light emitting diodes |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。