|Title:||Effective g factor of low-density two-dimensional holes in a Ge quantum well||Authors:||T. M. Lu
C. T. Harris
S. –H. Huang
|Issue Date:||2017||Journal Volume:||111||Journal Issue:||10||Start page/Pages:||107-112||Source:||Applied Physics Letters||Abstract:||
We report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ∼13 to ∼28, are observed in the density range of 1.4×1010 cm-2- 1.4×1011 cm-2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization. In the latter orientation, a small effective g factor, ∼1.3-1.4, is measured in the density range of 1.5×1010 cm-2- 2×1010 cm-2. This very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb. © 2017 Author(s).
|ISSN:||36951||DOI:||10.1063/1.4990569||SDG/Keyword:||Gallium alloys; Germanium; Indium alloys; Magnetic fields; Spin polarization; Temperature distribution; Density range; Effective g-factor; Ge quantum well; Measurements of; Sample surface; Shubnikov de-Haas oscillation; Strong anisotropy; Temperature dependence; Semiconductor quantum wells|
|Appears in Collections:||電機工程學系|
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