https://scholars.lib.ntu.edu.tw/handle/123456789/428873
標題: | Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage | 作者: | Wen-Jeng Ho Ruei-Siang Sue Jian-Cheng Lin Hong-Jang Syu Ching-Fuh Lin CHING-FUH LIN |
關鍵字: | Indium nanoparticles (In-NPs); ITO-electrode; MOS-structure solar cell; Plasmonics | 公開日期: | 2016 | 卷: | 9 | 期: | 8 | 起(迄)頁: | 715-720 | 來源出版物: | Materials | 摘要: | This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively. © 2016 by the authors. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/428873 | ISSN: | 19961944 | DOI: | 10.3390/ma9080682 | SDG/關鍵字: | Capacitance; Efficiency; Electrodes; Indium; Metal nanoparticles; Metals; MOS devices; Nanoparticles; Oxide semiconductors; Plasmons; Semiconducting indium; Semiconducting silicon; Silicon solar cells; Solar cells; Tin oxides; Electrical performance; External quantum efficiency; Indium nanoparticles; Indium tin oxide electrodes; ITO electrodes; Metal oxide semiconductor structures; MOS structure; Plasmonics; Bias voltage |
顯示於: | 光電工程學研究所 |
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