https://scholars.lib.ntu.edu.tw/handle/123456789/443056
標題: | Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillations | 作者: | Hang, D.R. D. K. Shih C. F. Huang W. K. Hung Y. H. Chang HAO-HSIUNG LIN YANG-FANG CHEN |
關鍵字: | InAsN; Nitride; Shubnikov-de Haas; Two-dimensional electron system | 公開日期: | 2004 | 卷: | 74 | 期: | 26 | 起(迄)頁: | 308-311 | 來源出版物: | Physica E: Low-Dimensional Systems and Nanostructures | 摘要: | Transport properties of two-dimensional electron gases formed in low-nitrogen-content InAs1-xNx/InGaAs single quantum wells have been investigated using Shubnikov-de Haas (SdH) oscillations. We determine the nitrogen-content-dependent two-dimensional carrier concentration and electron effective mass by analyzing the SdH oscillation function. The carrier mobility decreases with the increase of nitrogen composition, suggesting some deterioration of crystal quality. Our result shows that even in the dilute alloy limit, the electron effective mass increases considerably, and such an enhancement cannot be explained by the present simple band anticrossing model. © 2003 Elsevier B.V. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-1842634053&doi=10.1016%2fj.physe.2003.12.008&partnerID=40&md5=b8d6d4931449ce979e1284fe40c86f9d | DOI: | 10.1016/j.physe.2003.12.008 | SDG/關鍵字: | Carrier mobility; Electron transport properties; Electronic properties; Indium alloys; Mathematical models; Nitrides; Plasma oscillations; Semiconductor lasers; Shubnikov-de Haas; Two-dimensional electron systems; Semiconducting indium gallium arsenide |
顯示於: | 物理學系 |
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