https://scholars.lib.ntu.edu.tw/handle/123456789/447942| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chen, K.-T. | en_US |
| dc.contributor.author | Chen, H.-Y. | en_US |
| dc.contributor.author | Liao, C.-Y. | en_US |
| dc.contributor.author | Siang, G.-Y. | en_US |
| dc.contributor.author | Lo, C. | en_US |
| dc.contributor.author | Liao, M.-H. | en_US |
| dc.contributor.author | Li, K.-S. | en_US |
| dc.contributor.author | Chang, S.T. | en_US |
| dc.contributor.author | Lee, M.H. | en_US |
| dc.contributor.author | MING-HAN LIAO | zz |
| dc.creator | MING-HAN LIAO;Lee, M.H.;Chang, S.T.;Li, K.-S.;Liao, M.-H.;Lo, C.;Siang, G.-Y.;Liao, C.-Y.;Chen, H.-Y.;Chen, K.-T. | - |
| dc.date.accessioned | 2020-01-13T08:22:33Z | - |
| dc.date.available | 2020-01-13T08:22:33Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/447942 | - |
| dc.relation.ispartof | IEEE Electron Device Letters | - |
| dc.title | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | en_US |
| dc.type | journal article | - |
| dc.identifier.doi | 10.1109/LED.2019.2896231 | - |
| dc.identifier.scopus | 2-s2.0-85062685099 | - |
| dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062685099&doi=10.1109%2fLED.2019.2896231&partnerID=40&md5=cd3121763fa390cb90a8bb0afba84c75 | - |
| dc.relation.pages | 399-402 | - |
| dc.relation.journalvolume | 40 | - |
| dc.relation.journalissue | 3 | - |
| item.grantfulltext | none | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.fulltext | no fulltext | - |
| item.cerifentitytype | Publications | - |
| item.openairetype | journal article | - |
| crisitem.author.orcid | 0000-0003-2942-4520 | - |
| Appears in Collections: | 機械工程學系 | |
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