https://scholars.lib.ntu.edu.tw/handle/123456789/447952| Title: | In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Authors: | Chen, P.-G. Tang, M. Liao, M.-H. MING-HAN LIAO MING-HAN LIAO |
Issue Date: | 2017 | Journal Volume: | 129 | Start page/Pages: | 206-209 | Source: | Solid-State Electronics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/447952 | DOI: | 10.1016/j.sse.2016.11.002 |
| Appears in Collections: | 機械工程學系 |
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