https://scholars.lib.ntu.edu.tw/handle/123456789/447954
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, C.-C. | en_US |
dc.contributor.author | Hsieh, C.-P. | en_US |
dc.contributor.author | Huang, P.-C. | en_US |
dc.contributor.author | Cheng, S.-W. | en_US |
dc.contributor.author | Liao, M.-H. | en_US |
dc.contributor.author | MING-HAN LIAO | en_US |
dc.creator | MING-HAN LIAO;Liao, M.-H.;Cheng, S.-W.;Huang, P.-C.;Hsieh, C.-P.;Lee, C.-C. | - |
dc.date.accessioned | 2020-01-13T08:22:35Z | - |
dc.date.available | 2020-01-13T08:22:35Z | - |
dc.date.issued | 2016 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/447954 | - |
dc.relation.ispartof | Thin Solid Films | - |
dc.title | Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1016/j.tsf.2015.08.051 | - |
dc.identifier.scopus | 2-s2.0-84940982731 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84940982731&doi=10.1016%2fj.tsf.2015.08.051&partnerID=40&md5=09e83753e8d2796519bec1570427c69e | - |
dc.relation.pages | 78-83 | - |
dc.relation.journalvolume | 602 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.orcid | 0000-0003-2942-4520 | - |
顯示於: | 機械工程學系 |
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