https://scholars.lib.ntu.edu.tw/handle/123456789/46963| Title: | Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Authors: | Chang, Pen Chiu, Han-Chin Lin, Tsung-Da Huang, Mao-Lin Chang, Wen-Hsin Wu, Shao-Yun Wu, Kang-Hua Hong, Minghwei Kwo, Jueinai |
Issue Date: | 2011 | Journal Volume: | 4 | Journal Issue: | 11 | Start page/Pages: | - | Source: | Applied Physics Express | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/242893 | DOI: | 10.1143/APEX.4.114202 10.1143/APEX.4.114202 |
| Appears in Collections: | 應用物理研究所 |
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