https://scholars.lib.ntu.edu.tw/handle/123456789/485943
標題: | Low-temperature grown graphene films by using molecular beam epitaxy | 作者: | Lin, M.-Y. Guo, W.-C. Wu, M.-H. Wang, P.-Y. Liu, T.-H. Pao, C.-W. CHIEN-CHENG CHANG SI-CHEN LEE Lin, S.-Y. |
公開日期: | 2012 | 卷: | 101 | 期: | 22 | 來源出版物: | Applied Physics Letters | 摘要: | Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 °C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth. © 2012 American Institute of Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/485943 | ISSN: | 00036951 | DOI: | 10.1063/1.4768948 | SDG/關鍵字: | Carbon atoms; Cu foil; Current modulation; Few-layer graphene; Graphene growth; Graphene transistors; High quality; Low-temperature grown; Molecular dynamics simulations; Room temperature; Transistor architecture; Copper; Epitaxial growth; Molecular beam epitaxy; Molecular dynamics; Graphene |
顯示於: | 應用力學研究所 |
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