https://scholars.lib.ntu.edu.tw/handle/123456789/486862
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Y.-S. | en_US |
dc.contributor.author | Lu, S.-S. | en_US |
dc.contributor.author | PEI-ZEN CHANG | en_US |
dc.creator | PEI-ZEN CHANG;Chang, P.-Z.;Lu, S.-S.;Lin, Y.-S. | - |
dc.date.accessioned | 2020-04-28T07:15:24Z | - |
dc.date.available | 2020-04-28T07:15:24Z | - |
dc.date.issued | 1999 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/486862 | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.title | Ga<inf>0.51</inf>In<inf>0.49</inf>P/ln<inf>x</inf>Ga<inf>1-x</inf>As/GaA s lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.369527 | - |
dc.identifier.scopus | 2-s2.0-0009767708 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0009767708&doi=10.1063%2f1.369527&partnerID=40&md5=34b61f8c98c5005a346480b1a5fe23bf | - |
dc.relation.pages | 2197-2201 | - |
dc.relation.journalvolume | 85 | - |
dc.relation.journalissue | 4 | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Applied Mechanics | - |
crisitem.author.orcid | 0000-0003-3106-3154 | - |
crisitem.author.orcid | 0000-0002-4054-6791 | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 應用力學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。