https://scholars.lib.ntu.edu.tw/handle/123456789/491611
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Das, A. | en_US |
dc.contributor.author | Maikap, S. | en_US |
dc.contributor.author | Li, W.-C. | en_US |
dc.contributor.author | Chang, L.-B. | en_US |
dc.contributor.author | Yang, J.-R. | en_US |
dc.contributor.author | JER-REN YANG | en_US |
dc.creator | JER-REN YANG;Yang, J.-R.;Chang, L.-B.;Li, W.-C.;Maikap, S.;Das, A. | - |
dc.date.accessioned | 2020-05-12T02:51:17Z | - |
dc.date.available | 2020-05-12T02:51:17Z | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/491611 | - |
dc.relation.ispartof | Japanese Journal of Applied Physics | - |
dc.title | Physical and memory characteristics of atomic-layer-deposited high-�e hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1143/JJAP.48.05DF02 | - |
dc.identifier.scopus | 2-s2.0-70249142512 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-70249142512&doi=10.1143%2fJJAP.48.05DF02&partnerID=40&md5=83f4c9363b7d18319c8176b67b56ff84 | - |
dc.relation.journalvolume | 48 | - |
dc.relation.journalissue | 5 PART 2 | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.orcid | 0000-0001-7897-7039 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。