https://scholars.lib.ntu.edu.tw/handle/123456789/491721
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, M.-C. | en_US |
dc.contributor.author | Wang, C.-I. | en_US |
dc.contributor.author | Chen, Y.-C. | en_US |
dc.contributor.author | Chen, Y.-J. | en_US |
dc.contributor.author | Li, K.-S. | en_US |
dc.contributor.author | Chen, M.-C. | en_US |
dc.contributor.author | Chen, M.-J. | en_US |
dc.contributor.author | MIIN-JANG CHEN | en_US |
dc.creator | MIIN-JANG CHEN;Chen, M.-J.;Chen, M.-C.;Li, K.-S.;Chen, Y.-J.;Chen, Y.-C.;Wang, C.-I.;Tsai, M.-C. | - |
dc.date.accessioned | 2020-05-12T02:52:12Z | - |
dc.date.available | 2020-05-12T02:52:12Z | - |
dc.date.issued | 2018 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/491721 | - |
dc.relation.ispartof | Semiconductor Science and Technology | - |
dc.title | Suppression of short channel effects in FinFETs using crystalline ZrO<inf>2</inf> high-K/Al<inf>2</inf>O<inf>3</inf> buffer layer gate stack for low power device applications | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1088/1361-6641/aaab01 | - |
dc.identifier.scopus | 2-s2.0-85043477900 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043477900&doi=10.1088%2f1361-6641%2faaab01&partnerID=40&md5=8926d17b7a5513eef06034ce0604fa4e | - |
dc.relation.journalvolume | 33 | - |
dc.relation.journalissue | 3 | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
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